He joined the New Jersey Institute of Technology in 2014 and currently is an Associate Professor in the Department of Electrical and Computer Engineering. degree in Electrical Engineering from McGill University, Canada, in 2012. Hieu Pham Trung Nguyen received his Ph.D.
His research interests include nanoelectronics: III-nitride heterojunction devices (HEMT, NW LED), solar photovoltaics, energy harvesting using MEMS, and nanotechnology. He has published 105 journal research papers, 17 book chapters, and 58 conference papers to his credit and delivered 21 invited talks. He received Distinguished Faculty Award by NIT Silchar in 2019. Hartmann Department of Electrical and Computer Engineering, New Jersey Institute of Technology (NJIT), Newark, New Jersey, the USA, in 2019, and Solar Energy Research Institute of Singapore (SERIS), National University of Singapore (NUS), Singapore, in 2018. He was Visiting Researcher at Helen and John C. degree in Microelectronics Engineering from Sambalpur University, Odisha, in 2012. Abdul Kalam Technical University, Lucknow, in 2007 and a Ph.D. degree in Electronics and Communication Engineering from Berhampur University, Odisha, in 2000, M.Tech. Trupti Ranjan Lenka is an Assistant Professor in the Department of Electronics and Communication Engineering, National Institute of Technology Silchar, India. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications.
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT.
0 kommentar(er)
